Publication | Open Access
Valency changeover in Sm layers on Si(111)7×7 studied with soft-x-ray-absorption spectroscopy
18
Citations
20
References
1993
Year
Materials ScienceSemiconductorsLayer ThicknessSurface CharacterizationEngineeringCrystalline DefectsSm LayersSurface ScienceApplied PhysicsCondensed Matter PhysicsSemiconductor MaterialSm OverlayersChemistrySilicon On InsulatorEpitaxial GrowthSoft-x-ray-absorption SpectroscopyValency Changeover
The valency changeover in Sm overlayers on Si(111)7\ifmmode\times\else\texttimes\fi{}7 is probed with high accuracy using x-ray-absorption spectroscopy at the Sm ${\mathit{M}}_{4,5}$ edges. The valency of Sm has been studied as a function of the layer thickness in the chemisorption regime, and compared with the results obtained for epitaxially grown samarium silicide layers.
| Year | Citations | |
|---|---|---|
Page 1
Page 1