Applied Physics Letters · 2002 · 34 citations · 15 references
Materials ScienceMaterials EngineeringElectrical EngineeringOxide HeterostructuresTunable Microwave DevicesDevice AgilityEngineeringFerroelectric ApplicationSrtio3 LayersOxide ElectronicsApplied PhysicsSuperconductivityThin FilmsEpitaxial GrowthMicrowave EngineeringHigh AgilityEnhanced Dielectric Properties
The performance of tunable microwave devices based on heteroepitaxial YBa2Cu3Ox/SrTiO3 films on (001) LaAlO3 substrates has been evaluated. It was ascertained that “out-of-plane” SrTiO3 lattice parameter is the relevant factor in determining both device agility and dielectric loss. After high temperature annealing (1100 °C, 1 atm O2), only SrTiO3 layers deposited under low oxygen pressure (∼10−5 Torr) show an appreciable reduction of the dielectric losses while maintaining high agility. Annealed samples exhibit voltage independent losses of ∼5×10−3 simultaneously with 55% dielectric agility at 6 GHz and 77 K.
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Jerzy Krupka, R.G. Geyer, Manuela Kuhn et al. · IEEE Transactions on Microwave Theory and Techniques · 1994 · 226 citations