Japanese Journal of Applied Physics · 1990 · 17 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsCrystal StructureThin FilmsEpitaxial GrowthMetalsThin-film DepositionThin-film MaterialsEpitaxial Film GrowthEpitaxial Thin FilmsEpitaxial Thin-film GrowthHigh-resolution Electron MicroscopyHigh-resolution Transmission Electron MicroscopyLayer OrderingSputteringStacking
In situ epitaxial growth of BiSrCaCuO films by three target sputtering was performed on MgO substrates at a temperature of 650°C. From high resolution transmission electron microscopy, the film showed a superstructure consisting of the alternate stacking of the low- T c and high- T c phases with a c -axis of 34 Å. The film in the [110] or [1 1̄0] directions was parallel to <100 >MgO, and the transient layers between the substrate and the film were less than a few atomic layers thick. X-ray diffraction simulations indicated that the films contained random layer ordering of 34 Å bi-layers (low- T c +high- T c and high- T c +low- T c ) and random layer ordering of low- T c and high- T c phase layers.
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Mitsuko Onoda, Akiji Yamamoto, E. Takayama‐Muromachi et al. · Japanese Journal of Applied Physics · 1988 · 208 citations
Jun‐ichi Fujita, Tsuyoshi Yoshitake, H. Igarashi et al. · Applied Physics Letters · 1990 · 47 citations
Kenichi Kuroda, Kazuyoshi Kojima, Masami Tanioku et al. · Japanese Journal of Applied Physics · 1989 · 42 citations
Natural Sciences, Materials Engineering, Materials Science +17