Selective Si epitaxial growth by plasma-enhanced chemical vapor deposition at very low temperature

Abstract

A rf-plasma chemical vapor deposition process for selective epitaxial Si growth from SiH4 and SiF4 at a deposition temperature of 300–400 °C is described. Selective epitaxial growth is obtained as a balance of deposition precursors versus etching by F species. Also, the results indicate that a high H-surface coverage is not essential to deposit crystalline Si films by very low temperature rf-plasma chemical vapor deposition. P-doped films with a mobility of 80 cm2/V s and a carrier concentration of 3×1018 cm−3 are reported.