Publication | Closed Access
Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions
48
Citations
12
References
2007
Year
Magnetic PropertiesEngineeringTunneling ResistanceSpintronic MaterialMagnetic MaterialsMagnetoresistanceMagnetismTunneling MicroscopyNanoelectronicsPhysicsBarrier ThicknessMagnetoelasticityOscillatory Tmgo DependenceMagnetic MaterialMagnetoresistance EffectSpintronicsFerromagnetismNatural SciencesApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresMagnetic PropertyTopological Heterostructures
The authors fabricated fully epitaxial Fe(001)∕MgO(001)∕Fe(001) magnetic tunnel junctions (MTJs) with various MgO thicknesses (tMgO) and investigated spin-dependent transport properties. Both the tunneling resistance in the parallel magnetic state (RP) and that in the antiparallel magnetic state (RAP) exhibited short-period oscillations as functions of tMgO with the same period of 3.2Å and different phases. RAP also showed a long-period oscillation with a period of 9.9Å. As a result, tMgO dependence of magnetoresistance is expressed as a superposition of the short- and long-period oscillations. These results provide important clues for understanding the oscillatory tMgO dependence of the tunneling magnetoresistance effect.
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