Compositional dependence of band-gap energy and conduction-band effective mass of In1−<i>x</i>−<i>y</i>Ga<i>x</i>Al<i>y</i>As lattice matched to InP

Abstract

The band-gap energy and the electron effective mass of In1−x−yGaxAlyAs lattice matched to InP have been determined as a function of Al content. From photoluminescence measurements we obtain Eg(eV) = (0.76±0.04)+(1.04±0.10)y+(0.87±0.13)y2. The electron effective mass is determined from the plasma frequencies measured with Raman scattering in n-type samples. Its compositional dependence is given by m* = (0.0427±0.0015)+(0.0683±0.0007)y.