Simulations for the high-speed response of GaN metal-semiconductor-metal photodetectors

Abstract

Results of our Monte Carlo computations for the dynamic response of GaN photodetectors are reported. Electron and hole transport, circuit loading, electric field effects, and the intensity dependence are all comprehensively included. The impulse transient compares favorably with a 0.25 μm GaAs metal-semiconductor-metal device. The performance is better at lower photoexcitation intensities, and improvements for higher intensities are possible by increasing the applied voltage and operating in the ballistic regime at electric fields around 150 kV/cm.