Threshold for argon bubble growth in sputtered amorphous Nb3Ge

Abstract

We have studied the influence of the bias potential on argon incorporation and bubble formation in sputtered thin films of a-Nb3Ge. Above 100 V bias bubbles are observed directly by transmission electron microscopy and indirectly by abrupt changes in the electronic properties. The influence of the sputter parameters on argon incorporation at 0 V bias is also investigated.