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Raman scattering from molecular beam epitaxially grown superlattices of diluted magnetic semiconductors
40
Citations
9
References
1984
Year
EngineeringSurface-enhanced Raman ScatteringLo PhononsSemiconductor NanostructuresSemiconductorsQuantum MaterialsMolecular Beam EpitaxyMolecular BeamEpitaxial GrowthMaterials ScienceLa PhononsFirst RamanPhysicsGrown SuperlatticesNanocrystalline MaterialDiluted Magnetic SemiconductorsApplied PhysicsCondensed Matter PhysicsPhonon
We report the first Raman scattering study of Cd1−xMnxTe superlattices. The films are grown by molecular beam epitaxy. Brillouin zone-folding effects on LA phonons, resonant scattering by LO phonons, and the magnetic field-induced shift of the photoluminescence peak are reported. The latter yields an effective electronic g factor of ∼100, comparable to that of Cd1−xMnxTe bulk crystals. No collective magnetic excitation was detected at zero field even at 5 K in the superlattices studied. However, the Raman paramagnetic resonance of Mn2+ ions could be excited in an applied field. The implications of this result for magnetic phase transitions within superlattice layers are briefly mentioned.
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