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Photoinduced resistivity changes in Bi0.4Ca0.6MnO3 thin films
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Citations
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References
2005
Year
Materials ScienceVisible LightEngineeringOxide ElectronicsApplied PhysicsCharge-ordering TemperaturePhoto-electrochemical CellPhotoelectric MeasurementThin FilmsBi0.4ca0.6mno3 Thin FilmsOptoelectronicsThin Film Processing
We report charge-ordered Bi0.4Ca0.6MnO3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4Ca0.6MnO3 make them very promising for photonic device application.
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