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Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer
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Citations
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References
2008
Year
EngineeringOrganic ElectronicsOrganic ChemistryOptoelectronic DevicesChemistryOrganic Light-emitting DiodeLuminescence PropertyElectronic DevicesPhotodetectorsLight-emitting DiodesMoox P-doping LayerOptoelectronic MaterialsOrganic SemiconductorNew Lighting TechnologyHigh Brightness Tris-Charge Transfer ComplexMolybdenum OxideLow Turn-on VoltageOrganic Charge-transfer CompoundWhite OledSolid-state LightingElectronic MaterialsApplied PhysicsOptoelectronics
We have demonstrated an organic light-emitting diode based on molybdenum oxide (MoOx) doped 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) as a p-type doping hole injection layer. The tris-(8-hydroxyquinoline) aluminum (Alq3)-based organic light-emitting diodes show high brightness at very low operating voltage, 100cd∕m2 at 3.2V and 1000cd∕m2 at 4.4V, corresponding to a low turn-on voltage of 2.4V. Such improved properties are attributed to the formation of the charge transfer complex produced by doping MoOx into m-MTDATA, which provides much more free hole carriers, and the introduction of an efficient electron-injecting layer to improve the performance.
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