Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001) - Concepedia

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Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

14

Citations

29

References

2005

Year

O. Hulko, H.J. Kim, J. Liu, Bin Shi, Ya Xie

Thin Solid Films

Materials ScienceIi-vi SemiconductorGrowth TemperatureEngineeringSize DistributionNanotechnologyApplied PhysicsSemiconductor MaterialSilicon On InsulatorEpitaxial GrowthArsenic PressureSemiconductor Nanostructures

References

	Year	Citations

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