Submicron YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7 <i>x</i></sub>bicrystal grain boundary junctions by focused ion beam

Gianluca Testa, A. Monaco, E. Sarnelli, Angelo Agostino, Dae Joon Kang, E.J. Tarte, S. H. Mennema, Christopher Bell, M. G. Blamire

Superconductor Science and Technology · 2003 · 14 citations · 17 references

Abstract

Submicron YBa2Cu3O7-x bicrystal grain boundary junctions have been fabricated, for the first time, by a focused ion beam process. Although such a process has always been considered detrimental to the YBa2Cu3O7-x because of gallium contamination, high quality 24degrees [001] tilt junctions characterized by RSJ current-voltage characteristics, ICRN products of the order of 1-4 x 10(4) A cm(-2) at 77 K and Fraunhofer-like modulation patterns have been obtained. No significant degradation has been observed over more than 3 months. The critical current density J(C) and the characteristic voltage ICRN show a clear maximum for widths of the order of the Josephson penetration depth. The asymptotic normal resistance shows a typical (width)(-1) dependence, indicating that the FIB process does not increase the grain boundary resistivity of submicron junctions. Experimental results clearly show that FIB is a very powerful tool for the fabrication of high critical temperature superconducting circuits, requiring a small number of submicron Josephson junctions, and for fundamental physics analysis. it also allow the final turning or repair of superconducting or more complex integrated superconducting-semiconducting devices.

References

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