Recombination dynamics in InGaN quantum wells

Abstract

Transient photoluminescence measurements are reported on a thin InGaN single quantum well, encompassing the high injection regime. The radiative processes that dominate the recombination dynamics, especially at low temperatures, show the impact of localized electronic states that are distributed over a large energy range (∼100 meV). We suggest that these states originate from microstructural disorder in the InGaN/GaN system.