Type I and type II band alignments in ZnO/MgZnO bilayer films

Abstract

We report the change in the type of band alignments due to an increase in the dopant (Mg) concentration in pulsed laser deposited ZnO/MgZnO bilayer film. The band offset measurements were carried out from the core level shifts as well as valence band maxima in the single as well as the bilayer films. The change in the type of band alignment is attributed to the surface enrichment of Mg at the heterojunction.