Publication | Closed Access
Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates
12
Citations
25
References
2010
Year
Ii-vi SemiconductorChemical EngineeringEngineeringGaas SubstratesSurface ScienceApplied PhysicsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthSurfactant EffectCompound SemiconductorInas Layers
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