Publication | Closed Access

Effects of growth temperature for buffer layers on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

Materials ScienceGrowth TemperatureEngineeringOxide ElectronicsApplied PhysicsThin FilmsMolecular Beam EpitaxyEpitaxial GrowthPorous SiliconZno Thin FilmsThin Film Processing