Direct Writing Laser Doping from Spun‐On Glasses

Abstract

Direct writing laser doping from doped spun‐on glasses is reported. Under quasistationary regime, diffusion depths over 1 μm can be controlled across the laser power. Sheet resistances from below 20 up to 600 Ω/□ for boron‐diffused samples and up to 1600 Ω/□ for phosphorus‐diffused samples have been obtained for different processing laser powers.