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Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film
102
Citations
10
References
2008
Year
Transition Metal ChalcogenidesElectrical EngineeringEngineeringPhysicsNanoelectronicsOxide ElectronicsVanadium DioxideApplied PhysicsCondensed Matter PhysicsVo2 DeviceMetal-insulator TransitionElectrical Insulation
In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (VO2), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal VO2 thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the VO2 device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to >0.5MHz.
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