Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

Abstract

Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate decoration is observed to increase with decreasing atomic coincidence within the grain boundary plane (increasing Σ values). A few low-Σ boundaries contain anomalously high metal precipitate concentrations, concomitant with heavy dislocation decoration. These results provide direct experimental evidence that the degree of interaction between metals and structural defects in mc-Si can vary as a function of microstructure, with implications for mc-Si device performance and processing.