Epitaxial GaN nanorods free from strain and luminescent defects

Abstract

Raman spectroscopy, cathodoluminescence imaging, and electron backscatter diffraction have been used to characterize the GaN nanorods as compared to their supporting matrix. The nanorods are strain free, distinguished from the mechanically and thermally stressed matrix that bears the brunt of all lattice mismatch and thermal strain, strain relaxation, and the related defect generation. This thus allows the loosely attached nanorods to grow to measurable perfection in electronic and crystal structures. The nanorods are crystallographically aligned with the matrix as well as the substrate.