Exciton-induced lattice defect formation

Abstract

The lattice defect formation induced by electronic excitation in solid Ne is studied using the selective vacuum ultraviolet spectroscopy method. The samples are excited with synchrotron radiation in the range of excitonic absorption n=2Γ(3/2). The dose dependence of the intensity distribution in the band of atomic-type self-trapped exciton luminescence is analyzed. Direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism is obtained for the first time. A model of permanent lattice defect formation is discussed.