A New BaO‐TiO ₂ Compound with Temperature‐Stable High Permittivity and Low Microwave Loss

Abstract

The dielectric properties of ceramics in the TiO 2 ‐rich region of the BaO‐TiO 2 system were investigated. In the composition range between BaTi 4 O 9 and TiO 2 , another compound, Ba 2 Ti 9 O 20 , can be obtained when calcining and sintering conditions are controlled carefully. When dense and single‐phase, this ceramic has excellent dielectric and physical properties. At 4 GHz, the dielectric K = 39.8, Q = 8000, and τ K (temperature coefficient of dielectric constant) =−24 ± 2 ppm/°C.