Applied Physics Letters · 2001 · 23 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesThermal Properties Of SemiconductorsContact DegradationContact FormationContact ResistanceMetalorganic Chemical Vapor DepositionOhmic ContactsOhmic MaterialsResistivityThermal Stability
Al and Ti/Al/Pt/Au ohmic contacts on GaN epitaxial layers were studied. The epilayers were grown on Si (111) substrates by low-pressure metalorganic chemical vapor deposition. Al/GaN contacts achieved a minimum contact resistivity of 7.5×10−3 Ω cm2 after annealing in N2 ambient at 450 °C for 3 min. Further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved a minimum contact resistivity of 8.4×10−5 Ω cm2 after annealing in N2 at 650 °C for 20 s. The Ti/Al/Pt/Au contacts on GaN showed a better thermal stability than Al/GaN contacts. After annealing at 600 °C for 30 min. they were still ohmic contacts. The mechanisms for ohmic contact formation of Ti/Al/Pt/Au contacts were also analyzed.
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Very low resistance multilayer Ohmic contact to <i>n</i>-GaN
Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations
Low resistance ohmic contacts on wide band-gap GaN
Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations