The effect of reverse current on the dark properties of photovoltaic solar modules

Abstract

Forward and reverse dark current-voltage (I-V) and capacitance-voltage (C-V) characteristics of commercial amorphous silicon solar modules, were measured in order to study their performance under the influence of induced reverse currents. Maximum module surface temperatures were directly related to each value of the induced reverse current and in to the amount of current leakage respectively. Microscopic changes as a result of hot spots defects and overheating of the solar module, linked to reverse current effects, were also documented and discussed. Experimental evidence showed that different levels of reverse currents are confirmed to be a major degrading factor affecting the performance, efficiency, and power of solar modules.