Multiplexing of radio-frequency single-electron transistors

Abstract

We present results on wavelength division multiplexing of radio-frequency single-electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. A two-channel demonstration of this concept using discrete components successfully reconstructed input signals with small levels of crosscoupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced crosscapacitance and inductance, and should allow 20–50 channels to be multiplexed.