ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer

Satoshi Itoh, Norikazu Nakayama, Satoshi Matsumoto, Masaharu Nagai, K. Nakano, M. Ozawa, Hiroyuki Okuyama, Shigetaka Tomiya, T. Ohata, Masao Ikeda,

Japanese Journal of Applied Physics · 1994 · 55 citations · 16 references

Concepts

Abstract

Blue-green laser diodes exhibiting continuous-wave operation during hundreds-of-seconds have been fabricated. This structure is a ZnCdSe/ZnSSe/ZnMgSSe separate-confinement heterostructure with low dislocation density of ∼10 5 cm -2 in the n-ZnMgSSe cladding layer. The use of a GaAs buffer layer has lead to the decrease of dislocation density for laser-diodes, with which we have observed CW operation up to 80° C, that showed the feasibility of ZnCdSe/ZnSSe/ZnMgSSe SCH laser-diodes.

References

16