1/<i>f</i> noise characterization of Ir/<i>p</i>-Si and Ir/<i>p</i>-Si1−<i>x</i>Ge<i>x</i> low Schottky barrier junctions

Abstract

The electrical noise properties of Ir/p-Si and Ir/p-Si1−xGex (x=0.14) Schottky junctions have been studied. The 1/f noise measurements were performed under forward bias over a wide temperature and frequency ranges. The effect of annealing on the noise properties of these junctions was also investigated. Annealed junction shows higher noise level. This was attributed to the defects formation at the metal/semiconductor interface. From the temperature dependence of the 1/f noise power density, an optimum operating temperature for as deposited and annealed junctions was found. The Hooge parameter, αH, is derived from the experimental data over a wide range of temperature for the deposited junctions. Values of 2.26×10−6 and 1.78×10−6 were obtained at room temperature for Ir/p-Si and Ir/p-Si1−xGex, respectively.