Low-temperature investigations of single silicon vacancy colour centres in diamond

Abstract

We study single silicon vacancy (SiV) centres in chemical vapour deposition\n(CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high\nquality, low stress CVD diamond film by using temperature dependent\nluminescence spectroscopy in the temperature range 5-295 K. We investigate in\ndetail the temperature dependent fine structure of the zero-phonon-line (ZPL)\nof the SiV centres. The ZPL transition is affected by inhomogeneous as well as\ntemperature dependent homogeneous broadening and blue shifts by about 20 cm-1\nupon cooling from room temperature to 5 K. We employ excitation power dependent\ng(2) measurements to explore the temperature dependent internal population\ndynamics of single SiV centres and infer almost temperature independent\ndynamics.\n