A computer simulation of laser annealing silicon at 1.06 μm

Abstract

A computer simulation of laser annealing ion-implanted silicon with 1.06-μm radiation at energy densities of 38–76 MW/cm2 shows that the amorphous surface layer of the silicon melts. Quantitative predictions for the depth of the molten zone and the impurity distribution as a function of peak laser intensity and pulse duration agree well with published experimental observations. Additional analysis indicated that pulse duration, peak power density, and the impurity implantation depth are of primary importance in controlling the laser annealing process. Also, step junctions may be produced for optimal values of these parameters.