GaAs–Ga1−<i>x</i>Al<i>x</i>As double-heterostructure distributed-feedback diode lasers

Abstract

We report laser oscillation at 80–100°K in electrically pumped GaAs–Ga1−xAlxAs double-heterostructure distributed-feedback diode lasers. The feedback for laser oscillation was provided by a corrugated interface between the active GaAs layer and the p-Ga1−xAlxAs layer. The lowest threshold current density was 2.5 kA/cm2 in pulsed operation. The wavelength of laser emission was 8112 Å at 82°K with a half-width of less than 0.3 Å. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry-Perot laser.