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Polar-optical phonon-limited transport in degenerate GaN-based quantum wells
32
Citations
21
References
2001
Year
Wide-bandgap SemiconductorQuantum ScienceElectrical EngineeringElectron DensityPolar-optical Phonon-limited TransportEngineeringPhysicsNanoelectronicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsElectron EnergyAluminum Gallium NitrideGan Power DeviceBoltzmann Equation ApproachCategoryiii-v SemiconductorOptoelectronics
A theory of polar-optical phonon-limited electron transport in GaN-based quantum wells is developed within the Boltzmann equation approach. The linearized Boltzmann equation is solved for a degenerate two-dimensional electron system using a ladder technique, enabling evaluations of the effective momentum relaxation time and the low-field electron mobility to be carried out. Variations of the effective momentum relaxation time with the well width, electron energy, lattice temperature, and electron density are explored in these heterostructures. The corresponding mobility is then evaluated and its variations with the well width, lattice temperature, and electron density displayed. Comparison is made, where appropriate, with the results emerging from the application of a low-energy approximation.
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