Physical review. B, Condensed matter · 2001 · 32 citations · 21 references
Wide-bandgap SemiconductorQuantum ScienceElectrical EngineeringElectron DensityPolar-optical Phonon-limited TransportEngineeringPhysicsNanoelectronicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsElectron EnergyAluminum Gallium NitrideGan Power DeviceBoltzmann Equation ApproachCategoryiii-v SemiconductorOptoelectronics
A theory of polar-optical phonon-limited electron transport in GaN-based quantum wells is developed within the Boltzmann equation approach. The linearized Boltzmann equation is solved for a degenerate two-dimensional electron system using a ladder technique, enabling evaluations of the effective momentum relaxation time and the low-field electron mobility to be carried out. Variations of the effective momentum relaxation time with the well width, electron energy, lattice temperature, and electron density are explored in these heterostructures. The corresponding mobility is then evaluated and its variations with the well width, lattice temperature, and electron density displayed. Comparison is made, where appropriate, with the results emerging from the application of a low-energy approximation.
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O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations
Wide-bandgap Semiconductor, Piezoelectric Polarization Charges, Carrier Concentration Profiles +16
Band Structure and Electron Transport of GaAs
Hannelore Ehrenreich · Physical Review · 1960 · 463 citations