Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

Abstract

The KrF pulsed excimer laser (248nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355nm) have been used to separate GaN thin films from sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN–GaN light-emitting diodes were studied.