Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1−xAs nanostructure in the presence of a static electric field - Concepedia

Concepedia

Publication | Closed Access

Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1−xAs nanostructure in the presence of a static electric field

42

Citations

0

References

1998

Year

A. L. A. Fonseca, O. A. C. Nunes

Superlattices and Microstructures

Materials ScienceEngineeringPhysicsApplied PhysicsGaas/alxga1−xas NanostructureHydrogen ImpurityStatic Electric FieldMolecular Beam EpitaxyOptoelectronicsCompound SemiconductorSemiconductor Nanostructures

No additional data available for this publication yet. Check back later!