Preparation of tungsten oxide nanowires from sputter-deposited WCx films using an annealing/oxidation process

Abstract

The self-synthesis of tungsten oxide (W18O49) nanowires on sputter-deposited WCx films using a simple annealing/oxidization process was reported. It was found that thermal annealing of WCx films at 680°C for 30min in nitrogen followed by oxidation at 450°C for 30min in pure oxygen would yield dense and well-crystallized monoclinic W18O49 (010) nanowires with a typical length/diameter of about 0.15–0.2μm∕10–20nm. The formation of W18O49 nanowires is attributed to the nuclei of immature W2C nanowires experiencing a regrowth process, accompanied by carbon depletion and the oxidization of tungsten during the subsequent oxidization process.