Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si

Abstract

Transmission electron microscope examinations of silicon single crystals, phosphorus-diffused at low temperatures from anodic oxide films as phosphorus sources, showed the presence of crystallographically oriented precipitate. X-ray and electron diffraction investigations of SiP and SiAs single crystals prepared by a vapor-growth method revealed the orthorhombic crystal structure of the as-grown compounds. Using these structure data, the precipitate in the diffused silicon could be identified by electron diffraction as SiP. The orientation relationship SiP-precipitate/Si-matrix was determined.