Publication | Closed Access
Characteristics of GaN-based photonic crystal surface emitting lasers
40
Citations
12
References
2008
Year
PhotonicsOptical MaterialsEngineeringSolid-state LightingSemiconductor LasersApplied PhysicsLaser ApplicationsLasing WavelengthLaser MaterialGan Power DeviceThreshold Energy DensitySurface-emitting LasersGan-based PcselCategoryiii-v SemiconductorOptoelectronicsHigh-power Lasers
Characteristics of GaN-based photonic crystal surface emitting lasers (PCSELs) were investigated and analyzed. The GaN-based PCSEL emits a blue wavelength at 401.8 nm with a linewidth of 1.6 Å and shows a threshold energy density about 2.7 mJ/cm2 under the optical pumping at room temperature. The lasing wavelength emitted from PCSELs with different lattice constants occurs at the calculated band edges showing different polarization angles due to the light diffracted in specific directions, corresponding exactly to Γ, K, and M directions in the K-space. Furthermore, the PCSEL also shows a spontaneous emission coupling efficiency β of about 5×10−3 and a characteristic temperature of 148 K.
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