AgInSbTe memristor with gradual resistance tuning

Abstract

A chalcogenide material with Ag/Ag5In5Sb60Te30/Ag structure was proposed as a memristor. Reproducible gradual resistance tuning in bipolar/unipolar modes was demonstrated. The resistance variation was tuned more precisely by controlling the polarity, the amplitude, the width, and the number of applied voltage pulses. The bipolar memristive switch was attributed to the coexistence of intrinsic space charge limited conduction and extrinsic electrochemical metallization effect. Moreover, the unipolar gradual resistance tuning reconfirmed the electrochemical metallization effect. The gradual resistance tuning characteristics will promote this memristor to potential application in mimicking biological plastic synapses.