Publication | Closed Access
Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors
40
Citations
31
References
2014
Year
Materials ScienceElectrical EngineeringEngineeringOrganic ElectronicsOxide ElectronicsApplied PhysicsOrganic SemiconductorUltrathin Al2o3 LayerMicroelectronicsFlexibility ImprovementCompound Semiconductor
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