X-Ray Method for the Differentiation of {111} Surfaces in AIIIBV Semiconducting Compounds

Abstract

Most of the AIIIBV semiconducting compounds have the zincblende crystal structure. This structure is noncentrosymmetric and as a consequence the modulii of F(hkl) and F(h̄k̄l̄), the geometrical structure factors, have different magnitudes. This difference results in a variation in the integrated intensities of certain x-ray reflection from opposite sides of samples taken from crystals with the zincblende structure. X-ray measurements of a series of {111} reflections from opposite sides of an InAs single crystal have been made and related to the etching characteristics of these surfaces.