Publication | Closed Access
General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence
220
Citations
7
References
2004
Year
Intermediate Band DevicesEngineeringPhotovoltaicsSemiconductor DeviceIi-vi SemiconductorIbsc PrototypesGeneral Equivalent CircuitNanoelectronicsElectronic EngineeringCompound SemiconductorElectronic CircuitElectrical EngineeringPhotoluminescencePhysicsImpact IonizationSemiconductor MaterialMicroelectronicsApplied PhysicsSolar CellsOptoelectronicsGeneral Model
A general model to describe the operation of intermediate band solar cells (IBSCs), incorporating a significant number of physical effects such as radiative coupling between bands, and impact ionization and Auger recombination mechanisms, is presented in equivalent circuit form. The model is applied to IBSC prototypes fabricated from InAs quantum dots structures to determine the value of the circuit elements involved. The analysis shows evidence of splitting between the conduction and intermediate band quasi-Fermi levels, one of the fundamental working hypotheses on which operation of the IBSC depends. The model is also used to discuss the limitations and potential of this type of cell.
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