Heavy-Ion-Produced High-Resolution Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>K</mml:mi></mml:math>-X-Ray Spectra from a Gas and Solid

Abstract

Si-$K\ensuremath{\alpha}$-x-ray spectra produced by 45-MeV Cl-ion bombardment using thin solid Si and Si${\mathrm{H}}_{4}$ targets are measured. The Si satellite lines shift in energy and change in relative intensity between the solid and gas spectra indicating that different electronic states are produced in the two collisions. The effective fluorescence yield varies by a factor of 2 between the two systems affecting interpretation of comparisons of heavy-ion-induced x-ray-production cross sections.