Reflection electron-energy-loss investigation of the H-GaAs(110) surface

Abstract

Reflection energy-loss spectra have been performed on GaAs(110):H system at several stages of coverages. The fully chemisorbed surface shows several H-induced losses. They have been interpreted on the basis of hydride electronic structure and of self-consistent pseudopotential calculations. The results indicate that chemisorption takes place on both Ga and As sites of the unrelaxed substrate through covalent directional bonds.