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Gain−induced guiding and astigmatic output beam of GaAs lasers
214
Citations
23
References
1975
Year
PhotonicsEngineeringGain ProfileLaser ScienceSemiconductor LasersOptical PropertiesApplied PhysicsLaser Beam PropagationLaser PhysicsLaser ApplicationsGaas LasersGuided-wave OpticBeam OpticsJunction PlaneOptical SystemsGain DistributionOptoelectronics
Carrier diffusion from the active region creates a parabolic gain profile along the junction plane. By measuring the far‑field diffraction angle and beam width at the laser mirror, the authors calculate the gain‑distribution parameters and a negative refractive‑index increment that defocuses the mode. The experiment shows that gain‑induced guiding and refractive‑index antiguiding produce a Gaussian lowest‑order mode with cylindrical phase front and constant curvature, accounting for the astigmatic output beam; a negative refractive‑index increment, driven by competing free‑carrier and thermal effects, varies with current, reducing central gain and increasing edge gain.
We report on experimental evidence for gain−induced guiding and refractive−index antiguiding along the junction plane of stripe−geometry double−heterostructure GaAs lasers. It had previously been found that carrier diffusion out of the active region leads to a gain profile along the junction plane that can be approximated by a parabolic variation. This results in a lowest−order mode having a Gaussian profile, a cylindrical phase front, and a constant radius of curvature. This curvature accounts for the astigmatism always observed in the output beam from stripe−geometry GaAs lasers, where gain guiding dominates index guiding. Experimental determinations of the far−field diffraction angle, ϑ, and the beam width, 2w, at the laser mirror in the junction plane enable us to calculate the parameters characterizing the gain distribution responsible for mode confinement, as well as a negative refractive−index increment which would tend to defocus the mode. The negative index increment, as measured between the center and the edges of the stripe, appears to be related to a competition between a negative free−carrier effect and a positive thermal focusing mechanism. Above threshold, changes in ϑ and w with current imply changes in the gain−guiding mechanism. The theory implies in particular a decrease in gain at the center of the stripe and an increase at the edges with an increase in current.
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