Photoemission spectroscopy of ultrathin hydrogenated amorphous silicon layers

Abstract

Photoemission spectroscopy of ultrathin hydrogenated amorphous silicon films on silicon oxide show that the interfaces are atomically abrupt. The Si 3p valence band is already developed in monolayer-thick islands. The absence of quantum-size effects associated with holes indicates that the Si 3p wave functions are localized on a scale of a few angstroms. The range of the Si 2p core-hole--exciton interaction is estimated to be 6 A\r{}.