Photoluminescence and cathodoluminescence of GaN doped with Tb

Abstract

We report the observation of the visible cathodoluminescence and photoluminescence of Tb3+ ions implanted in GaN. The sharp characteristic emission lines corresponding to Tb3+ intra-4f8-shell transitions are resolved in the spectral range from 350 to 900 nm, and observed over the temperature range of 7–330 K. The luminescence shows transitions which originate in the D35 and D45 levels and terminated in the F7 manifolds. The cathodoluminescence emission is only weakly temperature dependent. The results indicate that Tb-doped GaN epilayers may be suitable as a material for visible optoelectronic devices.