Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single‐Walled Carbon Nanotube/C₆₀ Phototransistor

Abstract

A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.