Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier

Abstract

610 nm band AlGaInP compressively strained multiquantum-well laser diodes with a multiquantum barrier have been successfully fabricated by MOCVD using (100) GaAs substrates with a misorientation of 9° towards the (011) direction. The oscillating wavelength at 25°C is 615nm, which is the shortest ever reported for AlGaInP laser diodes operating at 25°C.