Room temperature Er³⁺ 1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

Abstract

Si-rich erbium silicate (SRES) films were deposited on p-type Si substrates by the magnetron sputtering technique and then annealed at 850 and 1000 °C in N 2 . Rutherford backscattering spectroscopy and Raman spectroscopy indicate that erbium silicates and Si excess, both in the amorphous phase, coexist in the SRES films. Photoluminescence excitation measurement indicates the sensitization effect of Si excess by an energy transfer process in the SRES film. The current–voltage characteristics show apparent improvement of carrier injection and transport in the SRES device (indium tin oxide (ITO)/SRES/p-Si) due to the Si excess in the SRES film. Room temperature Er 3+ 1.54 µm electroluminescence from the SRES device (ITO/SRES/p-Si) has been measured and studied by comparison with the erbium silicate device (ITO/erbium silicate/p-Si) and Er-doped Si-rich Si oxide (Er : SRO) device (ITO/Er : SRO/p-Si).