Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

Abstract

We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.